Chinese memory maker ChangXin Memory Technologies (CXMT) is reportedly closing the manufacturing gap with Samsung on DDR5 DRAM. A recent Chinese media report says the company has pushed yields on its 17nm-class DDR5 process past 90%. That would put it just a couple of percentage points behind Samsung’s reported 92–93% on similar-generation chips.

Yield rate is basically the percentage of good, usable chips that come out of each production run. Higher yields mean lower costs and more reliable supply, so if the number holds up, it’s a solid step forward for CXMT. Earlier reports suggested the company was struggling with lower yields on DDR5, and some people in the industry even thought it had skipped the 17nm node entirely and gone straight to 16nm. The latest claims could mean either better results on an existing process or just some difference in how the nodes are being described.

CXMT’s chips have already started showing up in a few commercial products. Acer and Asus are using the memory in select notebook models, mostly ones sold in China and other emerging markets. HP is reportedly using CXMT DRAM exclusively for units headed to the Chinese market, while Dell has apparently steered clear so far. The overall volumes and number of models are still pretty limited. Most big PC brands are still cautious about moving significant volume away from the established suppliers.

Samsung, SK hynix and Micron still dominate the global DRAM market, controlling more than 90 percent of revenue according to recent Counterpoint data. CXMT’s share is much smaller, even though its revenue has been growing quickly. Its process technology also still lags the denser nodes used by the top three, which give better bit density and power efficiency. That said, getting mature yields on a mainstream DDR5 node would make it easier for CXMT to supply the domestic market and handle some selective export volumes.

This is happening while the global memory market remains tight, largely because of heavy AI-related demand. CXMT isn’t in a position to challenge the leaders at scale yet, or on the most advanced products like high-bandwidth memory. But better manufacturing efficiency is still a meaningful move toward becoming a more consistent supplier. The real test will be whether these reported yields hold up once production ramps to higher volumes.

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Changxin Memory Technologies (CXMT), China’s leading dynamic random access memory (DRAM) developer, unveiled a significant technological breakthrough at the 69th IEEE International Electron Devices Meeting (IEDM) in San Francisco. The company showcased its prowess in advanced gate-all-around (GAA) transistors, a critical component for cutting-edge 3-nanometer grade chips.

CXMT’s presentation highlighted its design capabilities for GAA transistors, signaling a noteworthy achievement in the competitive landscape of memory chip production. Industry analysts have commended the company’s progress, especially its understanding of next-generation memory chip production.

Notably, CXMT faces challenges with US export restrictions, yet the company demonstrated progress despite trade limitations. Emphasizing the importance of the free flow of ideas for industry innovation, CXMT denied any violation of US sanctions or export controls.

CXMT recently announced the production of China’s first lower-power Double Data Rate 5 (LPDDR5) DRAM chip, positioning itself as a formidable player closing the gap with industry giants like Samsung and SK Hynix. The ongoing US-China tech war, marked by export restrictions on key chip manufacturing equipment, has not deterred CXMT’s pursuit of advanced semiconductor technologies.

The company, founded in 2016, has a strategic focus on high-bandwidth memory (HBM) chips crucial for AI applications and is actively developing next-generation logic chips using GAA transistors. Amidst challenges, such as US-imposed export controls on semiconductor-related technologies, including Electronic Design Automation (EDA) software, CXMT’s progress indicates resilience in the face of adversity.

In financial developments, Bloomberg reported a delay in CXMT’s initial public offering (IPO) due to volatile market conditions. The company now plans to raise funds privately at a valuation of approximately 140 billion yuan ($19.5 billion). The funds will be utilized to expand production capacities, aligning with CXMT’s anticipation of a memory market revival in 2024.

However, CXMT’s success in developing advanced DRAM technology may attract increased scrutiny and potential tightening of sanctions by the United States. With CXMT having received significant financial support from the Chinese government’s investment fund, American officials may scrutinize the source of funding, potentially impacting the company’s activities. 

CXMT’s strategic focus on positioning itself for growth in the semiconductor industry reflects its determination to navigate global challenges and emerge as a key player in the evolving landscape of memory technology.

Related:

• China’s Semiconductor Comeback Amid U.S. Restrictions
• China is Trying to go Toe-to-Toe with South Korea, the US in Advanced Chip Development
• In Hong Kong’s Tech Revolution, Semiconductors Lead the Charge

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