Samsung Electronics reclaimed its position as the world’s largest DRAM manufacturer in the fourth quarter of 2025. Data from market research firm Omdia showed that Samsung achieved a 36.6% share of the global DRAM market by revenue after generating $19.1 billion in sales between October and December. This marked a 40.6% increase from the previous quarter.

SK Hynix, Samsung’s closest competitor, recorded a 32.9% market share during the same period. The company reported $17.2 billion in DRAM revenue, up 25.2% quarter-on-quarter. The global DRAM market reached $52.47 billion in Q4 2025, representing a 30% increase compared to the third quarter.

Samsung’s return to the top came one year after losing the lead to SK Hynix in Q1 2025. The company attributed its growth to strong sales of high-value products, including HBM3E (5th-generation High Bandwidth Memory) and DDR5, which are widely used in AI computing and data centers.

Samsung benefited from a 40% increase in average selling prices (ASP) for DRAM due to rising market prices and higher demand for premium server memory products.

Micron Technology, the third-largest player, saw its market share decline to 22.9% in the fourth quarter, down from 25.8% in Q3. China’s CXMT accounted for 4.7% of the market.

Samsung plans to strengthen its leadership by expanding its production of advanced DRAM products such as HBM4 and high-capacity DDR5 memory. The company also aims to meet growing demand for low-power, high-performance DRAM like LPDDR5X in mobile and automotive applications.

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For years, Apple used its position as the memory industry’s biggest customer to secure lower prices on key parts like LPDDR. That balance has now shifted. In an unusual change, Samsung Electronics and SK hynix have successfully pushed through major price increases on low-power DRAM used in iPhones, forcing Apple to accept hikes of up to 100% for the first quarter of 2026.

Supply crunch shifts leverage to memory makers

According to a report from ZDNet Korea, Samsung proposed an 80% price increase, while SK Hynix asked for nearly 100%. Apple reportedly agreed to both due to a tight supply situation caused by rising demand for memory used in AI applications. As suppliers move production toward more profitable HBM (high bandwidth memory) chips, supplies of standard LPDDR have dropped, putting pressure even on the industry’s largest buyer.

Apple usually signs long-term annual contracts for memory supply, but this year, agreements were reportedly finalized only for the first half. This leaves room for more price increases later, especially ahead of the iPhone 18 Pro series launch, which could further raise Apple’s memory costs in the second half of the year.

Despite these increases, sources say Apple is still paying less for LPDDR than most competitors. However, the price gap between Apple and other buyers has narrowed. Samsung and SK hynix are clearly gaining more control over pricing, and early market reaction suggests investors approve. SK Hynix shares jumped more than 8%, while Samsung’s stock rose nearly 4% after the news.

TrendForce expects DRAM prices to rise by as much as 60% this quarter, showing how quickly the market is changing. Even Apple is no longer fully protected. The long period where buyers held the upper hand may be coming to an end, as memory suppliers begin setting the terms.

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Just as the PC market is starting to move past the chaos of previous GPU shortages, new signs suggest another supply squeeze may be forming—this time driven by memory, not chips.

Rising DRAM prices are reportedly forcing Nvidia to rethink its gaming GPU strategy, with production cuts expected in early 2026. According to industry sources, Nvidia plans to reduce output of GeForce RTX 5000-series gaming cards by as much as 30–40% in the first half of the year. The move comes as memory costs surge and manufacturing capacity is increasingly redirected toward higher-margin server and AI accelerators.

One early casualty of the situation appears to be Nvidia’s rumored GeForce RTX 5000 Super lineup. The refresh was expected to deliver up to 50% more VRAM at the same price point across both desktop and laptop GPUs, but the plan has reportedly been scrapped due to DRAM supply constraints.

Affordable, higher-memory models are likely to be hit hardest. The GeForce RTX 5060 Ti 16GB and RTX 5070 Ti are said to be among the most affected, as larger VRAM configurations are becoming increasingly expensive to produce.

Nvidia is said to expect softer gaming demand in 2026, partly due to a lighter release calendar. Still, cuts of this scale risk repeating a familiar pattern: limited availability, rising prices, and frustrated buyers.

The impact may extend well beyond graphics cards. Analysts warn the broader DRAM crunch, fueled by explosive demand from AI companies such as OpenAI, could push laptop prices up by at least 20%. Budget notebooks may fall back to 8GB of RAM, smartphones could ship with just 4GB again, and even upcoming gaming devices may see higher price tags.

As AI continues to dominate silicon priorities, consumers—and especially gamers—could be left paying the price.

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Samsung Electronics has set its sights on becoming the frontrunner in the emerging field of 3D DRAM memory, according to a report from Semiconductor Engineering. This announcement, made at the Memcon 2024 conference, highlights the company’s strategic move to address the limitations of traditional memory designs as the industry pushes towards even smaller chip sizes.

Samsung Unveils 3D DRAM Technology for Next-Generation Memory Solutions

With DRAM line widths expected to dip below 10nm in the latter half of this decade, current memory architectures are nearing their scaling limits. This has spurred the exploration of innovative solutions like 3D DRAM, which promises significant benefits in terms of capacity and footprint reduction.

At Memcon 2024, Samsung showcased two key technologies for 3D DRAM: Vertical Channel Transistors and Stacked DRAM. Vertical Channel Transistors represent a fundamental shift in transistor design. By turning the current flow channel from horizontal to vertical, Samsung aims to significantly reduce the transistor’s footprint. However, this approach also demands much higher precision in the etching process.

Stacked DRAM, on the other hand, focuses on maximizing space utilization. Unlike traditional 2D DRAM that utilizes only the horizontal plane, Stacked DRAM leverages the vertical dimension (z-axis) to stack multiple layers of memory cells within a single chip. This innovative approach has the potential to boost single-chip capacity to over 100GB, a substantial leap compared to current limitations.

These developments in 3D DRAM technology are part of Samsung’s long-term roadmap to enhance memory capabilities for various applications, including data centers, consumer electronics, and emerging technologies like artificial intelligence and 5G networks.

The market for 3D DRAM is projected to reach a staggering $100 billion by 2028. To solidify its lead in this race, Samsung has taken proactive steps by establishing a dedicated 3D DRAM research lab in Silicon Valley earlier this year. This strategic move positions them to attract top talent and accelerate their research and development efforts. Samsung is also exploring MUF Technology to manufacture next-generation DRAM for servers.

Samsung’s ambitions in 3D DRAM mark a significant push towards a new era of memory technology. If successful, this innovation could pave the way for even more powerful and compact electronic devices in the years to come. The competition in this space is sure to intensify as other major memory manufacturers scramble to catch up. However, with its head start and commitment to research, Samsung appears well-positioned to claim the crown in the 3D DRAM revolution.

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Samsung is considering incorporating molded-in-fill (MUF) technology in its upcoming generation of dynamic random-access memory (DRAM), as reported by TheElec. This move signifies Samsung’s exploration of innovative techniques to enhance the performance and efficiency of its memory solutions. MUF technology, previously utilized by SK Hynix in high-bandwidth memory (HBM) production, offers promising prospects for Samsung’s future DRAM endeavors.

Samsung’s tests on an MR MUF process have shown promising results

MUF technology involves injecting a material between semiconductors after drilling numerous tiny holes in the semiconductor layers. This process aims to securely connect multiple vertically stacked semiconductors. Samsung’s recent tests on an MR MUF process for 3D stacked memory have shown enhanced throughput compared to conventional methods like thermal pressed non-conductive film (TC NCF). However, there are considerations regarding its impact on physical characteristics.

While Samsung found MUF unsuitable for HBM technology due to specific requirements, it sees potential applications in 3DS registered dual in-line memory modules (RDIMMs), primarily used in server environments. The decision aligns with Samsung’s commitment to advancing server DRAM memory technologies to meet evolving industry demands.

MUF’s success in HBM production by SK Hynix has garnered attention in the semiconductor industry. This epoxy resin molding compound is believed to offer advantages such as preventing wafer warpage and enhancing overall performance. Samsung’s pursuit of developing its own MUF compound in collaboration with Samsung SDI indicates a strategic move to establish proprietary solutions tailored to its requirements.

The potential adoption of MUF technology by Samsung holds significance for the semiconductor market. As the world’s leading storage semiconductor company, Samsung’s endorsement of MUF could catalyze its widespread acceptance and adoption as a mainstream technology. This development has the potential to reshape the semiconductor material market landscape, driving significant transformations in the industry.

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Micron Technology, Inc. has introduced the industry’s first standard low-power compression attached memory module (LPCAMM2). Available in capacities ranging from 16GB to 64GB, the LPCAMM2 promises enhanced performance, energy efficiency, space savings, and modularity.

The LPCAMM2 memory achieves speeds up to 9600Mbps as compared to 5600Mbps of current DDR5 SODIMMs

Expected to be in production by the first half of 2024, it is positioned as the first disruptive form factor for client PCs since the introduction of small outline dual inline memory modules (SODIMMs) in 1997.

Micron’s LPCAMM2 integrates LPDDR5X DRAM, offering up to 61% lower power consumption and up to 71% better performance for essential workloads, such as web browsing and video conferencing. Additionally, it provides a remarkable 64% space savings compared to SODIMM offerings. As generative artificial intelligence (GAI) becomes more prevalent on client PCs, the LPCAMM2 is designed to deliver the necessary performance for processing Artificial Intelligence workloads while maintaining low power consumption.

Praveen Vaidyanathan, Vice President and General Manager of Micron’s Compute Products Group, emphasizes the transformative nature of the LPCAMM2, stating that it will deliver best-in-class performance per watt in a flexible, modular form factor. The new product is expected to enhance the capabilities of AI-enabled laptops and allows for memory capacity upgrades as technology and user needs evolve.

LPCAMM2’s development involved collaboration with key client PC OEMs and ecosystem enablers, and it represents a significant departure from current memory module form factors. The new memory solution offers higher performance with LPDDR5X, achieving speeds of up to 9600Mbps, an 80% reduction in system standby power for improved battery life, and benefits in digital content creation and productivity workloads.

Moreover, the LPCAMM2 boasts modularity, enabling critical serviceability functionality for enterprise IT users and administrators. It features a single PCB for all module capacities, providing supply chain flexibility for OEM and ODM customers. Compared to SODIMMs, LPCAMM2 simplifies motherboard routing complexity.

Crucial LPCAMM2 retail products will be made available, allowing laptop users, including gamers and content creators, to upgrade their system memory configuration, marking an industry first for low-power memory. The Crucial LPCAMM2 products are set to be available in the first half of 2024.

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SK Hynix has unveiled its latest DRAM innovation, the HBM3E memory, a groundbreaking product specifically designed for AI applications. This announcement establishes the company’s dominance in the ultra-high-performance memory sector. Samples are already being distributed to customers for performance verification, and mass production starts in 1H24.

HBM3E Achieves an Astounding 1.15TB/s Data Processing Speed

HBM (High Bandwidth Memory) refers to a stack of multiple DRAM chips vertically arranged, which considerably amplifies data processing speeds. The evolution of HBM DRAM has seen its advancements from the first-generation HBM to the most recent, fifth-generation HBM3E. Notably, HBM3E is an enhancement of its predecessor, HBM3.

With their extensive history in HBM production, SK Hynix commented on the release, “As the exclusive manufacturer of HBM3, our development of the world’s most superior HBM3E showcases our deep expertise and commitment to leading the AI memory market.” The company has plans to commence mass production of this cutting-edge memory by the first half of the subsequent year.

The HBM3E boasts a staggering data processing speed of 1.15 terabytes per second. To put this in perspective, it’s capable of handling 230 full high-definition (FHD) movies, each 5 gigabytes in size, in just one second.

Beyond its sheer speed, the product incorporates the latest Advanced MR-MUF technology, enhancing heat dissipation by a notable 10% compared to its previous generation. Furthermore, the HBM3E is designed with backward compatibility. This feature enables a seamless transition for customers, allowing the integration of HBM3E into existing HBM3-based systems without necessitating any design alterations.

The longstanding partnership between NVIDIA and SK Hynix further solidifies the promise of HBM3E. Ian Buck, VP of NVIDIA’s Hyperscale and HPC Division, expressed enthusiasm about the collaboration’s future, emphasizing the potential of the new HBM3E in revolutionizing AI computing.

Samsung is also set to start mass production of HBM chips tailored for AI in the latter half of 2023, competing directly with SK Hynix. In 2022, SK Hynix held a 50% share of the HBM market, Samsung had 40%, and Micron accounted for the remaining 10%. The HBM market constitutes just 1% of the overall DRAM segment.

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Earlier this year, the South Korean memory chip manufacturer SK Hynix announced the arrival of their cutting-edge DRAM, claiming it would be the fastest DRAM in the market. In recent reports which have emerged online, it has been confirmed that this DRAM will be worth waiting for. Apparently, MediaTek has tested out the LPDDR5T chips with their upcoming processor and confirmed that the new LPDDR5T ( Low Power Double Data Rate 5 Turbo) is faster than anything else currently available in the market.

As per the reports, the LPDDR5T will have a 9.6 Gbps data rate, a 13 percent increase from the current generation LPDDR5X by Samsung. It operates at ultra-low voltages of 1.01 to 1.12V, which is 10% lower than the previous generation LPDDR5X. This makes LPDDR5T extremely power efficient while still providing fast speeds of up to 9.6 Gbps. It is also available in a variety of storage capacities, up to 16GB. This allows for high-performance mobile devices with plenty of storage space. SK Hynix has also provided samples of 16GB multi-chip packages, which combine multiple LPDDR5T chips into one package. This allows for even higher speeds and processing power, up to 77GB of data per second.

It is speculated that MediaTek has used the Dimensity 9300 SoC to test out the LPDDR5T DRAM from SK Hynix. Going by that logic, we can expect upcoming phones featuring the Dimensity 9300 SoC to also come with LPDDR5T DRAM onboard. Currently, the Vivo X100 and the X100 Pro are the likely candidates, as earlier leaks have revealed that these smartphones feature the Dimensity 9300 SoC. That being said, this is merely speculation at this point, so we suggest readers take it with a pinch of salt and stay tuned for more.

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Samsung has just announced its next generation of DRAM memory chips. The company’s latest DRAM module is the industry’s first Graphics Double Data Rate 7 (GDDR7) memory, which offers notable upgrades over its predecessor, so here are all the details.

Samsung GDDR7 DRAM Specifications

The South Korean tech giant’s new announcement brings the latest memory technology. It offers improvements in data speeds, surpassing the 24Gbps that was showcased with last year’s DDR6 DRAM. Samsung’s new 16-gigabit GDDR7 DRAM will help the company grow in the graphics market, thanks to its advancements in integrated circuit design and stable performance at higher speeds. The brand’s GDDR7 DRAM module has set the record with a whopping 1.5TBps.

It also claims to offer a higher data speed per min of 32Gbps. As per official notes, the improvements were possible by the Pulse Amplitude Modulation (PAM3), which allows for 50 percent more data to be transmitted compared to the Non Return to Zero (NRZ) from previous generations within the same cycle. Despite bringing performance upgrades overall, the GDDR7 model is also 20 percent more energy efficient than the older GDDR6 module.

Yongcheol Bae, Samsung’s Executive VP of the Memory Product Team, stated that “Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphics performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles. The next-generation graphics DRAM will be brought to market in line with industry demand and we plan on continuing our leadership in the space.”

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Samsung, a prominent player in the semiconductor industry, is set to start mass production of high-bandwidth memory (HBM) chips for artificial intelligence (AI) applications later this year. The company is determined to close the gap with SK Hynix, a key competitor that currently leads the AI memory semiconductor market.

Market Dynamics: SK Hynix’s Lead and Samsung’s Ambitious Plans

As per reports from Korean media, Samsung plans to start mass-manufacturing HBM chips specifically designed for AI in the second half of 2023. In 2022, SK Hynix commanded approximately 50% of the HBM market, while Samsung held around 40% market share, with Micron accounting for the remaining 10%, according to TrendForce via The Korea Times. It is worth noting that the HBM market represents only about 1% of the entire DRAM segment.

However, with the anticipated growth of the AI market, the demand for HBM solutions is projected to rise. Samsung aims to catch up with SK Hynix by ramping up the production of its HBM3 chips, which boast 16GB and 24GB capacities. These advanced chips utilize a vertical stacking technique to combine multiple DRAM chips and can achieve speeds of up to 6.4Gbps.

While the term “AI” has garnered significant attention, the increasing adoption of AI servers underscores the need for high-bandwidth memory solutions. Samsung’s strategic move to mass-manufacture HBM3 chips aligns with the market’s shifting demands and positions the company to compete effectively in the evolving landscape of AI supercomputing.

With Samsung’s entry into mass production and its commitment to memory semiconductor-centered supercomputers by 2028, the race for dominance in AI memory semiconductors is expected to intensify.

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Samsung has recently announced that it has started mass production of its 16-gigabit (Gb) DDR5 DRAM, utilizing the industry’s pioneering 12-nanometer (nm)-class process technology. This achievement comes after the initial announcement made in December of the previous year.

Boosting AI Applications: The Potential of Samsung’s Newest DRAM

The production process incorporates advanced multi-layer extreme ultraviolet (EUV) lithography, establishing the highest die density in the industry. Consequently, this technology yields a 20% increase in wafer productivity.

Furthermore, this DDR5 DRAM exhibits a considerable reduction in power consumption of up to 23% when compared to previous generations. Samsung asserts that this makes their solution highly suitable for global IT companies aiming to enhance their eco-friendly operations.

The utilization of a new high-κ material contributes to increased cell capacitance. Enhanced capacitance results in a significant electric potential difference in data signals, facilitating more accurate differentiation between them.

The DDR5 DRAM claims to deliver speeds of 7.2 gigabits per second (Gbps). To put this into perspective, it can process two 30-gigabyte (GB) ultra-high-definition movies in just one second. This exceptional speed positions the technology to support an expanding array of applications, including data centers, artificial intelligence, and next-generation computing.

Samsung completed the evaluation of its 16-gigabit DDR5 DRAM for compatibility with AMD in December of last year and continues to collaborate with global IT companies to drive innovation in the next-generation DRAM market.

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SK hynix Inc., the South Korean memory chip manufacturer, has made a groundbreaking announcement with the unveiling of the world’s fastest mobile DRAM, the LPDDR5T (Low Power Double Data Rate 5 Turbo). The LPDDR5T operates at an impressive data rate of 9.6 gigabits per second (Gbps), a 13% increase from the previous generation LPDDR5X, which was released in November 2022. The company added ‘Turbo’ to the standard name LPDDR5 to highlight the maximum speed of the product.

The LPDDR5T operates within the ultra-low voltage range of 1.01 to 1.12V set by the JEDEC (Joint Electron Device Engineering Council). As per company reports, LPDDR5T is extremely fast while having ultra-low power consumption at the same time. SK hynix also plans to provide customers with a variety of storage capacities. The company has provided samples of 16 gigabyte multi-chip packages, which combine multiple LPDDR5T chips into one package. This allows for a processing power of 77GB of data per second. 

SK hynix plans to begin mass production of LPDDR5T using 1anm technology in the latter half of the year 2023. 1anm technology is the fourth generation of the 10nm technology. As per IT industry forecasts, there will be an increased demand for memory chips with better specifications, owing to the imminent expansion of the 5G smartphone market. With Artificial Intelligence, machine learning and Virtual reality becoming more and more accessible, SK Hynix predicts that their LPDDR5T DRAM will be an asset to the same. 

Sungsoo Ryu, Head of DRAM Product Planning at SK hynix, stated that the company has fulfilled customers’ demand for ultra-high-performance products and will continue to work on technology development to lead the next-generation semiconductor market and become a game-changer in the IT world.

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Samsung Electronics has developed an industry-first 12nm-class DDR5 dynamic random access memory (DRAM) in collaboration with Advanced Micro Devices (AMD). This new DRAM is set to begin mass production in 2023 and is expected to advance the capabilities of next-generation computing, data centers, and artificial intelligence (AI) applications with its exceptional performance and greater power efficiency.

Samsung’s 12nm DDR5 DRAM to advance data centers and AI applications

The 16GB DDR5 DRAM was made possible through the use of innovative technology, including a new high-κ material that increases cell capacitance and proprietary design technology that improves critical circuit characteristics. This, combined with advanced multi-layer extreme ultraviolet (EUV) lithography, has resulted in the industry’s highest die density, enabling a 20% gain in wafer productivity.

Leveraging the latest DDR5 standard, Samsung’s 12nm-class DRAM will offer speeds of up to 7.2 gigabits per second (Gbps), allowing it to process two 30 gigabyte (GB) ultra-high definition (UHD) movies in just one second. In addition to its impressive speed, the new DRAM is also notable for its power efficiency. It consumes up to 23% less power than previous DRAMs, making it an ideal solution for global IT companies seeking more environmentally friendly operations.

“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers, and AI-driven systems.”

The development of the 12nm-class DDR5 DRAM was made possible through close collaboration with industry partner AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms,” said Joe Macri, Senior VP, Corporate Fellow, and Client, Compute and Graphics CTO at AMD.

With mass production set to begin in 2023, Samsung plans to broaden its DRAM lineup built on this cutting-edge 12nm-class process technology into a wide range of market segments. The company will continue to work with industry partners to support the rapid expansion of next-generation computing.

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Micron Technology is a US-based multinational semiconductor company that has operations in Japan and Taiwan for its chipmaking business. And as both Nikkei Asia and ITHome report, the tech giant will start mass-producing advanced DRAM memory chips at its Japanese Hiroshima plant in Q4 this year.

ITHome reports that on a press media visit to Micron’s A3 chip manufacturing factory, Micron‘s Taiwanese division director, Lu Donghui announced that the A3 factory will be introducing extreme ultraviolet (EUV) lithography equipment in the second half of the year, to prepare early for the mass production of 1-gamma DRAM that is due to launch in 2024.

And as for 1-Beta DRAM Mass Production, it is reported that 1-Beta DRAM will be initially manufactured in Japan, and then the production will switch over to the Taiwanese plant later. For context, the current 1-Alpha DRAM is manufactured in the Taiwanese plant.

And the report by ITHome seems to be valid, as another news outlet, Nikkei Asia has reached out to Chief Business Officer at Micron, Sumit Sadana, regarding the news of 1-Beta DRAM production.

Nikkei Asia quotes Sadana that the company will start mass-producing advanced DRAM memory chips at its Hiroshima plant by the end of the year, which falls in Q4 2022. 

The company is coordinating with the Japanese government and business partners, such as equipment makers, to start producing them in Japan as well, Sadana said in an interview. He did not reveal the size of the investment in the Hiroshima plant but said manufacturing such chips generally requires new equipment and clean rooms.

Micron is expected to determine the scale of its investment based on government subsidies and other factors.

DRAM is used for temporary data storage in a wide variety of electronics, including smartphones and servers. And for Micron’s naming scheme, the company had already mass-produced its 1X, 1Y, 1Z and 1-alpha DRAM. The 1Xnm process is equivalent to 16-19nm, 1Ynm is equivalent to 14-16nm, and the 1Znm process is equivalent to 12-14nm. According to industry sources, the latest 1-alpha, 1-beta and 1-gamma may be equivalent to 14-12nm, 12-10nm and 10nm respectively

Micron has announced in 2021 plans to invest $150 billion in memory manufacturing and research and development worldwide over the next decade. With the company laying out plans for 1-beta production, industry watchers are looking to see where it will manufacture the next-generation 1-gamma DRAM, which is targeted for mass production in 2024.

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Have you ever encountered a situation where your personal desktop or laptop did not have enough RAM to run a task? Or was your RAM not sufficient enough to prevent the programme from stuttering? And was that task keeping 15 tabs open on Google Chrome? 

If you answered yes to any of the 3 questions above, then Samsung might have the solution for you. Introducing Samsung’s latest DDR5 RAM solution, where technology now enables a user to possess 512GB of DDR5 memory on a single RAM stick.

As one of the current industry-leading suppliers of DDR4 memory, Samsung is planning to take the lead in the development of DDR5 RAM. Recently Samsung posted a video on its YouTube channel, highlighting the latest features of Samsung DDR5-7200 module technology.

Samsung‘s new 512GB DDR5 RAM modules refine the firm’s layer stacking memory packing tech, as used in its latest DDR4 memory modules. In the diagram below, you can compare the difference between Samsung’s 4-layer DDR4 memory chips, with the 8-layer DDR5 chips, both connected using Samsung’s Through Silicon Via technology. 

Through grinding of the silicon layers Samsung has been able to make the constituent dies 40 per cent thinner, and similarly reduced layer spacing – thus these much denser DDR5 integrated chipsets are actually thinner, at 1.0mm vs 1.2mm. In turn, Samsung will be able to manufacture a single 512GB RAM stick with 8 stacked DRAMs connected together.

Last but not least, Samsung claims its DDR5 technology is twice as fast as the previous generation, claiming speeds of up to more than 6400Mbps.

However, the increase in performance does not affect power efficiency because Samsung’s DDR5 technology is actually 30% more power-efficient than its previous generation thanks to the lower required voltages to run the DDR5 RAM.

Samsung has mentioned that it will be supplying DDR5 RAM to data centres, smartphone manufacturers and laptop manufacturers alike. And whether 512GB DDR5 RAM sticks will reach the hands of consumers, is a question reserved to be answered in the 2020s.

RELATED:

• DDR3 Soon To Be Phased Out in 2022, Following Samsung and SK Hynix Plans to Cease Production
• Samsung first to develop faster & more efficient 14nm LPDDR5X DRAM for next gen flagship phones
• Samsung Galaxy A33 vs Galaxy A53 vs Galaxy A73: Specs Comparison
• Redmi K50 Standard Review: Dimensity 8100 — probably the Best Chip of the year
• Redmi K50 Pro Full Review: Dimensity 9000 — 2k OLED Display at $470!

(Source, Via)

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As the electronic devices of today keep getting more technologically advanced year by year, as consumers, we demand more memory and faster speeds for smoother operations across a wide variety of applications. DRAM memory has become an essential electronic component in keeping our devices running smoothly and fast, and there are a lot of RAM options in the market from the latest DDR5 memory to the cheapest DDR3 memory.

However, DDR3 seems to be showing its age in the market, as the technology initially launched in 2007 turns 15 years old today in 2022. With that context in mind, several of the world’s largest DRAM suppliers such as Samsung and SK Hynix have come out to announce that the industry is looking to discontinue the production of DDR3 due to dwindling market demands, and higher demands for its DDR4 and DDR5 options instead.

According to Digitimes, Samsung has already notified its customers that the company will keep taking orders on DDR3 RAM until the end of 2022 and fulfil these orders by the end of 2023. Popular 1GB, 2GB, and 4GB DDR3 memory options are expected to have production ceased by the end of 2022. 

SK Hynix is also reportedly looking forward to phasing out DDR3 SDRAM production, though it is unclear when the company will cease to supply them. The report from Digitimes, also notes that citing industry sources, DRAM maker Micron, on the other hand, has no plans to cease production of DDR3 RAM at the time of publishing. 

Although most electronic devices of today have already transitioned over DDR4 or DDR5 memory for DRAM, there is still a relatively large quantity of inexpensive devices like routers that still use DDR3 memory. In addition, older 2nd hand or refurbished early 2010s laptops that are still in circulation in the market still need DDR3 memory for repairs and replacements.

The discontinuation of production could spell a price hike for the inexpensive electronic devices, as manufacturers will now be using the more expensive DDR4 option instead, and that cost of production in the end would be given back to the consumer. On the bright side, technology is finally saying goodbye to the slower DDR3 memory, and providing a faster user experience for all by transitioning to DDR4 and DDR5 in the future.

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• Redmi K50 Standard Review: Dimensity 8100 – probably the Best Chip of the year

(Via)

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Smartphones with higher RAMs have been a thing for years now. You might have experienced the scenarios when your smartphone’s RAM is more than your laptop. After the explosion of the Gaming smartphone market, this has gone to another level. Nubia recently brought its RedMagic 6 series and launched an 18GB RAM variant of RedMagic 6 Pro. Ahead of leaks saying ASUS will follow suit, SK Hynix has confirmed the news today.

In a press release, SK Hynix, which is a South Korean supplier of DRAMs (Dynamic Random Access Memory) chips, said that it supplied the very first 18GB LPDDR5 products to the Taiwanese giant ASUS. This is for the upcoming ROG Phone 5 gaming smartphone and the top-end variant should feature it.

Recently, reports regarding the 18GB RAM variant of the device surfaced on the internet. The variant appeared on the benchmarking platforms Geekbench and Master Lu. Anyway, SK Hynix says that it has started the mass-production of 18GB (gigabyte) LPDDR5 mobile DRAM chips.

These chips will ensure high processing speed and image quality with improved temporary data storage. These RAMs are capable of speeds up to 6,400Mbps which is around 20% faster than the current versions(5,500Mbps). Specifically, this means you can transfer ten 5GB FHD (Full-HD) movies per second.

The ASUS ROG Phone 5 is launching in a couple of days i.,e on March 10. The device is likely to feature a 6.78-inch OLED screen on the front, Snapdragon 888 chipset, and a revamped rear panel Dot-Matrix LED on the back.

DXOMARK Audio review revealed that it will also have a 3.5mm audio jack, Dual-Front facing speakers with Dirac tuning technology. Other expected specs include a  64MP Quad-Bayer triple-camera, a 6,000mAh battery with 65W rapid charging, and run Android 11 OS.

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(Via)

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Micron Technology is ready to expand its workforce in India. The company’s Managing Director for India has told the Hindu Business Line that it will hire more employees in the next three years. Further, the company is also planning to establish a Center of Excellence and expand industry-academia collaboration in the country.

As per the report(via Digitimes), Anand Ramamoorthy, Managing Director of Micron Technology (India), says the company will increase headcount. Precisely, it will recruit about 3,600 more employees. This would bring the final tally to 5,000 employees by 2023. He says that the company has rapidly expanded by tripling the headcount in the last 12 months.

For the unware, Micron Technology is a US-based memory chip maker. Its portfolio of products includes computer memory, computer data storage, dynamic RAM(DRAM), flash memory(NAND flash), and USB flash drives. Headquartered in Boise, Idaho, the company has expertise in SSD, graphics memory, and LPDDR5 DRAM for 4G and 5G smartphones.

EDITOR’S PICK: Micron has yet to receive a license to sell to Huawei, may lead to fall in sales

As for India, the company, in 2018, allocated $3 billion for investment in Hyderabad. Moreover, it’s expanded a lot in the Asian region as well. In fact, it has back-end fabs in Taiwan, Malaysia, Singapore, and China. In case you don’t know, back end of line (BEOL) is where individual parts mingle with the wiring on the wafer.

Micron is very positive about growing electronics manufacturing industry in India and is considering increasing its presence in India. Micron has agreed to set up a Center of Excellence in memory and storage systems in India with Govt. of India.

— Ravi Shankar Prasad (@rsprasad) December 14, 2020

However, the company reportedly is far away from setting up a production line in India. Although things are looking good for the country in the distant future, it isn’t going to make haste decisions regarding this right now. Still, the company is ready for academic tie-ups in the country.

Ramamoorthy says that Micron has authorized its University Research Alliance of Micron (URAM) to facilitate industry-academia collaboration for research and innovation in memory design. According to the Indian Minister of Electronics & IT, Ravi Shankar Prasad, Micron has also agreed set up a center of Excellence in memory and storage systems with Govt. of India.

UP NEXT: Microsoft Surface Pro 8 CPU, Memory variants listed online; could launch in early 2021

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Prices of DRAM, and NAND flash memory chips plunged in October as per a Korean report. The reason for the downfall is reportedly the US’ sanction on Huawei that recently came into effect.

According to a research firm DRAMeXchange(via TheElec) prices of PC DDR4 8GB DRAM, 128GB NAND flash memory card. And USB MLC products fell to $2.85, and $4.2 in October respectively. In fact, the drop from August and September is about 8.9% for the DRAM. And 3.4% for the memory chips above. The report also says that the drop is higher than the 5% drop in July for DRAM.  This drop was after a sudden soar in early 2020 due to the COVID-19 situation.

EDITOR’S PICK: SK Hynix launches World’s First DDR5 DRAM, offers 1.8 times faster transfer rates

That said the report says the average selling price of PC DRAM will continue to fall in Q4 2020. It could reach as high as a 10% drop as the oversupply situation is imminent. The reason these prices dint drop that much in Q3 was the heavy stockpiling of Huawei after US ban. Further, South Korean giant Samsung also said that it expects Q4 to be dull for server chips demand as demand lessens, and competition rises.

Before you conclude a catastrophe, the report breathes confidence that the memory market will likely recover next year. Although there isn’t a proper timeline, somewhere before the first half of 2021 should do it. Similarly, Semiconductor Equipment and Materials International(SEMI) predicts that semiconductor fab spending will rise by 18% in 2021.

The impending YoY(year-on-year) demand for Memory chips has forced companies like Samsung to reportedly invest in fab facilities before the situation gets out of hand. This could probably make up for the worst situation it faced this year due to the pandemic.

UP NEXT: OEMs ramp up IC parts orders in a bid to fill the vacuum created by Huawei’s slump

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Back in 2019, SK Hynix announced that it was successful in the development of a new generation of DRAM memory chips. These new chips were labeled as HBM2E, which are now finally ready for mass production.

According to official claims, the HBM2E has a performance of  3686.4Gbps per pin. This translates to a bandwidth of more than 460GB/s, with a total of 1024 I/O (input/output). The HBM2E architecture stacks eight 16 gigabit DRAM chips with TSV (Through Silicon Via) technology to achieve a total capacity of 16GB, which is more than twice the capacity of previous generation HBM2 memory.

Editor’s Pick: Honor 30 Youth Edition announced, features 90Hz display and Dimensity 800 5G SoC

For those unaware, HBM2 was the memory used by AMD in its previous generation of Radeon Fury graphics cards that were first released back in 2015. Despite having various advantages, its high cost and other limiting factors led to its eventual discontinuation in later generations. Although now, SK Hynix has launched the latest generation of memory solution that arrives with AI systems with deep learning accelerators that would be useful for high performance computers.

UP NEXT: Honor X10 Max 5G launched with a massive 7-inch display & Dimensity 800

(Source)

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Changxin Memory Technologies, previously known as Innotron Memory, and previously to that known as either Hefei Chang Xin or Heifei Rui-li IC Manufacturing, is said to be targeting 10k wpm DRAM production by the end of the year. Changxin will compete against chips giants Micron Technology and Samsung Electronics in a $1 billion per year market.

The Chinese company is taking steps to minimize its use of US technology thereby propels them to redesign its dynamic random access memory (DRAM) chips. The company is taking measures to avoid infringing patents and potentially falling victim to the U.S. pressures on China’s rising tech industry.

While Changxin is determined in reducing their reliance on US technology, much of its production still reply on U.S. equipment and tool suppliers. By redesign its DRAM chips, the company is hoping that they will be safe against potential U.S. allegations of intellectual property theft.

While the output will still be small compared with the 1.3 million DRAM wafers a month currently produced globally, the start of production would still mark a major breakthrough for China as the country currently has no homemade DRAM chips, said Sean Yang, an analyst at market research company CINNO.

However, much like the world’s leading semiconductor manufacturers, Changxin still needs to use U.S. equipment from companies like Applied Materials, Lam Research, KLA-Tencor, materials from Dow Chemical and electronic design automation tool providers from Cadence and Synopsys. For more news, stay around on Gizmochina.com.

UP NEXT: Xiaomi Mi Band 4 officially launched with AMOLED color Display & Cheap Price tag

(Source)

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According to Jimmy Goodrich, vice president of global policy at the Semiconductor Industry Association, a trade group based in Washington DC, “Semiconductors are arguably humanity’s greatest achievement to date. They’re still central to everything that’s modern or electronic, whether you’re driving a car, or surfing the internet, or using a supercomputer-everything is ultimately based on a semiconductor and lots of them.” If you think this assertion isn’t correct, ask Chinese firm ZTE which almost went bankrupt when the US government imposed a ban which prevented the company from using US technology. Even though the biggest challenge was the use of Google’s Android OS, the company would have lost out entirely because a flagship phone without Qualcomm’s latest chipset isn’t really one.

The semiconductor industry continues to post some gains as the market experiences boom. Preliminary results released by Gartner show that worldwide semiconductor revenues totalled US$476.7 billion in 2018 which is 13.4% higher than the revenue in 2017. The Memory chips solidified its ranking as the largest semiconductor category as it reportedly accounted for 34.8% of total semiconductor revenues, an increase of 31% from 2017’s revenue.

In terms of ranking, Samsung maintained its lead of the market and even increased the gap solidifying its position as the No. 1 vendor. Samsung’s impressive revenue is tied to the DRAM market, an analyst at Garner disclosed. He went on to state that despite building on the growth established in 2017, Samsung’s overall gains due to its memory chips accounted for half the 2017 growth rate.

Read Also: Samsung announces record profit for Q3 2018 despite a decline in smartphone sales YoY

Gartner’s report also reveals that the top-4 vendors in 2017 retained their ranking in 2018. This means Intel still remains the second largest semiconductor manufacturer. Intel’s semiconductor revenue is said to have grown by 12.2% compared with 2017, driven by a combination of unit and average selling price (ASP) growth. At the third position is SK Hynix, while Micron Technology is in the fourth position. Qualcomm moved from the fifth largest chipmaker in 2017 to the sixth position in 2018 while Broadcom moved a step up. The rest of the top 10 comprises Texas Instruments, Toshiba, Western Digital and NXP. However, Gartner projects the current rankings may see significant change this year due to expectations that memory market conditions will weaken in 2019 in the face of rising US/China tensions.

(source)

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The current generation of DRAM, DDR4, also known as “double data rate fourth generation” has been around for quite long. The module started to make its way to computers way back in 2014. However, it is only now after four year’s that we’re seeing the very first glimpse of the next generation, i.e. DDR5. SK Hynix, a prominent DRAM manufacturer, has managed to call first dibs on the world’s first 16GB DDR5 memory chip. The chips are also the first DDR5 modules to be compliant with the JEDEC memory standard.

Speaking more about specifications, the new modules are prepared using Hynix’ 10nm fabrication. DDR5 is expected to give much faster transfer speeds, and evidently, the Hynix DDR5 chip can go up to 5200Mbps transfer speeds which is roughly 60 percent faster than DDR4’s 3200Mbps. Furthermore, it will do this consuming 30 percent less power than the previous version. SK Hynix has left out some details including the die size used for the new modules.

The company intends to shore up its DDR5 range with other capacity versions like the 8GB and 32GB. However, the important thing to note is that SK Hynix has only demoed the first chipset. Actual commercial production isn’t expected to start until 2020. It took quite a lot of time before DDR4 RAM modules actually started going mainstream after they were finalized and this is likely to be the case with DDR5 as well.

Apart from SK Hynix, Cadence and Micron have also been working on DDR5 RAM and expecting productions to begin by 2019.

(Via)

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Earlier today, Samsung Electronics announced it has developed the world’s smallest DRAM chip.

Belonging to the 10nm class just like its predecessor, the 8-gigabit chip also features a 15% improvement in energy efficiency and a 10% increase in performance. Its operating speed has also increased to 3,600mbps per pin compared to 3200mbps of he first gen model.

Samsung’s new chip will make its way into mobile phones, graphic cards and cloud-computing centers. The Korean giant also added that it will change most of its existing DRAM production capacity to 10-nm chips next year.

READ MORE: Samsung Galaxy A8 And A8 Plus Appears In A New Hands-On Video Ahead Of Launch

“Through a rapid ramp-up of the 2nd-generation 10nm-class DRAM, we will expand our overall 10nm-class DRAM production more aggressively, in order to accommodate strong market demand and continue to strengthen our business competitiveness.” said Gyoyoung Jin who is the president of memory business at Samsung Electronics

(Source)

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Samsung Electronics has proved its mettle as the world’s largest smartphone maker and the company was recently crowned as the world’s most profitable company. The South Korean company has now added another feather to its cap as market data released Friday showed the company has edged out Intels from the top spot as the world’s number one chip maker in the world in terms of sales and operating profits in the second quarter of this year.

Samsung lead, even though just in the second quarter only, is a significant one as Intels Corporation has held on to the foremost position as the top chipmaker in the world for the past 24 years. The successful Q2 2017 result was made possible by Samsung’s proactive approach to a rapidly changing market. The company recently developed next-generation techs for dynamic random-access memory (DRAM) chips and NAND flash memory in addition to CPU. This versatile approach resulted in a quarterly operating profit of 8.03 trillion won ($7.1 billion) in the second quarter as the demand for server DRAMs and SSD products. The company is said to have recorded overall sales estimated at 17 trillion won ($15 billion) from the chip business.

Related: Xiaomi May Dethrone Samsung in Indian Smartphone Market; Vivo & OPPO Also Growing Rapidly

On its part, Intels has been unsuccessful in its bid to manufacture chipsets for mobile devices and was not quick to capture the emerging and growing smartphone, tablet and wearables segment. Intels posted a total revenue of $14.8 billion and an operating profit of $3.8 billion for the same period. This growth could play out again in the annual revenue posting as Samsung is predicted to topple Intel in overall sales this year. Samsung’s growth in the chip business could also see some help from its adoption of connected chips for IoT devices and automobiles among its portfolios.

(source)

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Samsung has today officially announced the introduction of what is said to be the industry’s first 8GB LPDDR4 (low power, double data rate 4) DRAM package for mobile devices. According to the report, the 8GB mobile DRAM package uses four of its latest 16GB LPDDR4 memory chips and is manufactured using advanced 10nm-class process technology.

The 8GB LPDDR4 DRAM comes in as a powerful mobile DRAM solution which the company says will enable more capable next-generation, flagship mobile devices around the world and is suited to meet the escalating needs of devices having dual camera, 4K UHD and VR features.

Continuing, the company disclosed the new 8GB LPDDR4 operates at up to 4,266 megabits per second (Mbps), which is twice as fast as DDR4 DRAM for PCs working typically at 2,133 Mbps per pin. Assuming a 64 bit (x64) wide memory bus, this can be viewed as transmitting over 34GBs of data per second. Already, there are a number of high-end ultra-slim note PCs using 8GB of DRAM currently but Samsung’s new 8GB LPDDR4 package will help other next-generation mobile devices take full advantage of its extremely high capacity. For example, equipping tablets with 8GB of LPDDR4 will enable virtual machine operation and smoother 4K UHD video playback, popular features of many premium PCs.

In addition, the Samsung 8GB LPDDR4 DRAM provides much more efficient power consumption thanks to its use of the latest 10nm-class process technology and Samsung’s proprietary low-power circuit design. This circuit design enables the memory chip to double the capacity of the company’s 20nm-class 4GB DRAM package, while consuming approximately the same amount of power.

In terms of dimension, the 8GB LPDDR4 package comes in under 15mm x 15mm x 1.0mm, which satisfies space requirements of most new, ultra slim mobile devices. Using a DRAM package thinner than 1.0mm enables stacking the package together with UFS memory or a mobile application processor, depending on device manufacturers’ preferences, which will allow further space savings on the printed circuit board.

Read More: Samsung Rumored as working on Snapdragon 830 Chip on a 10nm Process

In August last year, Samsung introduced the industry-first 20-nanometer 12GB LPDDR4 DRAM and now after only 14 months in development, the Korean tech giant is introducing the first 10nm-class single-package solution of 8GB LPDDR4 DRAM which is expected to speed up the launch of next-generation mobile devices and tablets with even more advanced performance.

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Apart from its smartphones, Samsung is known for its advanced DRAM chips. Earlier today, the company announced that it had started mass producing 12Gb LPDDR4 RAM chips using 20nm process. This is definitely good news for smartphone enthusiasts as the new chip will enable manufacturers to add up to 6GB RAM inside smartphones.

There’s a good chance that many of you are confused right now. We said that Samsung was manufacturing 12Gb LPDDR4 DRAM chips, yet we say that 6GB RAM smartphones are possible. This is because, here 12Gb is actually 12 Gigabits. Now, there are eight bits in a byte. So, the 12Gb DRAM is actually of 1.5GB each. Usually, smartphone manufacturers can add up to four DRAM modules on smartphone which makes it possible to add up to 6GB RAM (1.5GB x 4) inside.

The new 12Gb i.e. 1.5GB DRAM module is reportedly 30 faster and 20 percent more efficient than its previous generation 8Gb chips. FYI, these 8Gb Samsung modules are used by most 4GB RAM smartphones in the market today, including OnePlus 2, Galaxy S6 Edge+ and Note 4.

At the moment, even 4GB RAM seems to be more than enough for mobile devices. So, it will be interesting to see whether 6GB RAMs are actually required by future smartphones.

What do you think?

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