Samsung Electronics is a known brand in the consumer electronics industry. The company is popular for its smartphones, various home appliances and a lot more. However, many are unaware that the company is also a world leader in the memory market. Now, the South Korean tech giant has just announced that it is starting the mass production of the world’s fastest storage units that will soon be available in flagship smartphones.

Samsung has begun the large scale manufacturing of the industry’s first 512GB eUFS (embedded Universal Flash Storage) 3.1. You can expect these to be house in premium grade flagships and are touted to deliver performance speeds nearly three times higher than the current generation, eUFS 3.0. The company broke the 1GB/s threshold through the new eUFS 3.1, marking a new advancement in technology.

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According to Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung, “smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards.” In other words, Samsung is focusing on the future, since it is preparing for the advancement in other fields which the faster memory will supplement eventually. This holds especially true in terms of gaming performance and large media files like 4K or even 8K video recording.

In terms of read and write speeds, the new Samsung eUFS 3.1 storage boasts 1,200MB/s which is over twice as fast as the SATA based SSD storage of PCs (with 540 MB/s). Similarly, these speeds are over 10 times faster than conventional microSD card read speeds as well (90MB/s). The new memory technology may even soon be found in ultra thin ultrabook laptops as well. So stay tuned as we’ll cover smartphones that will feature the new memory standards.

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Mobile phone storage has evolved exponentially in the last few years. From the days of 4GB of built-in memory to the current 256GB of internal storage, it sure has been a huge jump. But come next year, we should see that number double as Samsung has announced that it has begun manufacturing 512GB embedded storage for phones.

The announcement was made yesterday in South Korea. According to Samsung’s VP of Memory Sales & Marketing, Jaesoo Han, “By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world.”

The new flash storage (eUFS) will feature Samsung’s 512-gigabit V-NAND chip and will overcome current limitations posed by the use of MicroSD cards.

The new 512GB UFS increases the density of the 256GB eUFS storage from 48 layers to 64 layers and also includes a controller chip. Samsung is also using a bunch of new technologies to increase performance and energy efficiency. The controller chip also helps by speeding up the process that converts logical block addresses to physical blocks.

Samsung says the read and write speeds have also improved. Sequential read speeds reach up to 860 megabytes per second, and 255 megabytes per second for write speeds.

The new eUFS storage is also said to read 42,000 IOPS (input/output per second) and write 40,000 IOPS for random operation. Compare that to the 100 IOPS that conventional MicroSD cards read and you have about a 400x improvement in performance. The outcome of this is that users can enjoy a seamless multi-media experience in addition to “file searching and video downloading in dual-app viewing mode”.

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There is no mention as to which phones will be the first to get to use the new storage but it will be interesting to see the Galaxy S9 launch with it.

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