Samsung is yet to fully milk the Galaxy S7 and S7 Edge, not to talk of the Galaxy Note 7 but talks have started to shift to the Galaxy S8 which would be next year’s flagship. Recent rumors with their origin as South Korea reveal that Samsung will feature the Snapdragon 830 chipset which Qualcomm is expected to release next year on some versions of the Galaxy S8. On top of that, the rumor also reveals that Samsung and Qualcomm have struck a deal which would see the South Korea tech giant manufacture the Snapdragon 830 chip on a 10nm node process. The Snapdragon 830 has featured in earlier rumors alleging it would be manufactured using the 10nm process.

According to the rumor, the technology at play will be called Fan-out Panel Level Package (FoPLP), and it would enable Samsung to produce the chips without a printed circuit board for the package substrate. On this technology, Samsung and Qualcomm will allegedly work together to develop it. The FoPLP technology is said to lower cost of production and makes the integration of Input/output ports easier, with a thinner chip than before. Also, the fact that it would use a 10nm node process implies there would likely be improvements in power and heat control.

Read more: Qualcomm’s Next Flagship Chip May Not Be Called Snapdragon 830: Analyst

As we have heard in the past, Samsung is also working on its own Exynos 8895 chipset which would use the same 10nm node process and is said to be the SD 830’s counterpart on the Galaxy S8. Although nothing is confirmed at this point, we’ll be on the look out for more information on this new alliance between Samsung and Qualcomm to see how it eventually plays out.

(source)

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Just as MediaTek is working on releasing the Helio X30 high-end chipset into the market, rival chipmaker Qualcomm is also working hard on its own Snapdragon 830 next-generation chipset to ensure it features in flagships next year. The Snapdragon 830 chipset had been embroiled in rumors surrounding its specs and more rumors continues to chip in.

Lately, a Weibo user leaked what could be insider information that confirms that the Snapdragon 830 processor will use the 10nm process and that the next generation chipset from Qualcomm will be available next year. The SD830 chipset will likely be announced later this year but would hit the market next year, making its debut most likely on Samsung’s 2017  Galaxy S8 flagship according to other reports.

Earlier rumors had speculated that the Qualcomm Snapdragon 830 processor will use the 10nm FinFET process and Kyro 200 architecture, sporting an Adreno 540 GPU, X16 baseband which is allegedly capable of downlaod speed of up to 980Mbps and has LPDDR4X memory and 4K × 2K / 60fps video recording, dual lifting performance and functionality.

Read More: Snapdragon 830 Rumored To Use Samsung’s 10nm Process, Supports 8GB RAM

Since the Helio X30 chipset from MediaTek is also rumored to use the same 10nm process, it is unclear which among the two will display superior performance when launched. All the same, the Snapdragon 830 processor is believed to greatly reduce power consumption in smartphones and also provide heat control capabilities.

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