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As per Reuters, ChangXin Memory Technologies (CXMT) has shared its first quarterly earnings since its July IPO, reporting a net profit of 54.4 billion yuan ($8.16 billion USD) for Q3 2026. As per Reuters, revenue reached 118.71 billion yuan ($17.81 billion USD), a 613.2% year-over-year increase.

This growth stems from a shift in the global memory market. As major suppliers like Samsung, SK Hynix, and Micron pivot production toward high-bandwidth memory (HBM) for AI processors, the supply of standard DRAM has tightened. CXMT has absorbed this demand, pushing its gross margin to 89.53%.
CXMT is now preparing to enter the HBM market itself. Supply chain sources indicate the company will begin limited production of HBM3E chips within two months. However, CXMT faces manufacturing hurdles: its HBM3E yields are currently estimated at 20 to 30%, well below SK Hynix’s 70%.
To close this technical gap, CXMT spent 11.07 billion yuan ($1.66 billion USD) on R&D in the first nine months of the year. The company recently validated its sixth-generation DRAM technology, a necessary step before commercial production.
Financially, CXMT holds 285.16 billion yuan ($42.77 billion USD) in cash, funding new fabrication plants in Beijing, Shanghai, and Hefei. These facilities are projected to double the company’s capacity to 600,000 12-inch wafers per month. Additionally, CXMT is preparing to enter the NAND flash-memory market, which would expand its product lineup across the broader memory hardware sector.
In related news, Chinese memory maker narrows the DDR5 DRAM performance gap with Samsung.
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