G.SKILL has officially launched its flagship DDR5 memory series, the Trident Z5 Royal, boasting a unique combination of aesthetics and high-performance. The Trident Z5 Royal merges the sleek lines of the Trident Z5 series with the “Royal Diamond” light guide strip design. This combination is available in both gold and silver color options, allowing users to personalize their builds with a touch of elegance.

The heat sink on the RAM has undergone an electroplating process which gives it a unique look

G.SKILL has equipped the Trident Z5 Royal memory with a robust aluminum alloy heat sink. This heat sink undergoes an electroplating process to enhance not only its functionality but also its visual appeal, resulting in a memory module that is both effective and aesthetically pleasing.

The Trident Z5 Royal memory boasts strong performance capabilities thanks to its support for Intel’s XMP 3.0 memory overclocking technology. By utilizing a motherboard and CPU certified on the QVL (Qualified Vendor List), users can effortlessly enable XMP in the BIOS to unlock the memory’s rated overclocking speed, pushing performance boundaries.

At the time of writing, G.SKILL has only launched a single memory kit on JD.com. This kit features 64GB capacity (2 x 32GB modules) and boasts a starting specification of 6400MT/s with 32-39-39-102 timings. The introductory price for this kit is 2149 yuan.

(Via)

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Micron, a leading supplier of memory and storage solutions, recently introduced new DDR5 memory modules in 24GB and 48GB capacities. The modules are compatible with AMD EXPO and Intel XMP 3.0 profiles, making them easy to set up and use with desktop PCs running the AMD Ryzen 7000 series And Intel 12th and 13th Gen Core processors.

Micron’s new DDR5 memory modules feature 5200 MT/s and 5600 MT/s data transfer rates and CL46 latency at 1.1V. DDR5-5600 DIMMs come in traditional 8GB, 16GB and 32GB versions, but the new 24GB and 48GB models stand out because they’re based on 24Gb memory chips, while traditional Dimensions may use 16Gb DRAM ICs. Meanwhile, DDR5-5200 modules are only available in 8GB, 16GB, and 32GB sizes.

The 24GB and 48GB capacities are ideal for next-generation server platforms because they allow systems to balance memory capacity and core count, reducing cost. Additionally, AMD EXPO and Intel XMP 3.0 profiles, designed primarily for enthusiasts, are supported, suggesting that these Modules are for the desktop.

Using a few 24GB or two 48GB modules instead of a pair of 32GB and 64GB DIMMs allows you to build a PC with 48GB or 96GB of dual-channel memory, which is less expensive than a machine with 64GB or 128GB of RAM. Meanwhile, capacities like 48GB and 96GB are more suitable for modern CPUs with 16 or 24 cores – For example, if you’re doing a virtual machine, you might get 2GB or 3GB per core.

Micron has not revealed suggested prices for its DDR5-5200 and DDR5-5600 modules. However, given the expected low PC demand in Q1 and the expected 18-23% drop in DDR5 SDRAM prices in Q1 2023, new memory modules are expected to be relatively cheap, although Their high capacity and higher performance.

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Samsung Electronics has developed an industry-first 12nm-class DDR5 dynamic random access memory (DRAM) in collaboration with Advanced Micro Devices (AMD). This new DRAM is set to begin mass production in 2023 and is expected to advance the capabilities of next-generation computing, data centers, and artificial intelligence (AI) applications with its exceptional performance and greater power efficiency.

Samsung’s 12nm DDR5 DRAM to advance data centers and AI applications

The 16GB DDR5 DRAM was made possible through the use of innovative technology, including a new high-κ material that increases cell capacitance and proprietary design technology that improves critical circuit characteristics. This, combined with advanced multi-layer extreme ultraviolet (EUV) lithography, has resulted in the industry’s highest die density, enabling a 20% gain in wafer productivity.

Leveraging the latest DDR5 standard, Samsung’s 12nm-class DRAM will offer speeds of up to 7.2 gigabits per second (Gbps), allowing it to process two 30 gigabyte (GB) ultra-high definition (UHD) movies in just one second. In addition to its impressive speed, the new DRAM is also notable for its power efficiency. It consumes up to 23% less power than previous DRAMs, making it an ideal solution for global IT companies seeking more environmentally friendly operations.

“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers, and AI-driven systems.”

The development of the 12nm-class DDR5 DRAM was made possible through close collaboration with industry partner AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms,” said Joe Macri, Senior VP, Corporate Fellow, and Client, Compute and Graphics CTO at AMD.

With mass production set to begin in 2023, Samsung plans to broaden its DRAM lineup built on this cutting-edge 12nm-class process technology into a wide range of market segments. The company will continue to work with industry partners to support the rapid expansion of next-generation computing.

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(source)

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Micron Technology is a US-based multinational semiconductor company that has operations in Japan and Taiwan for its chipmaking business. And as both Nikkei Asia and ITHome report, the tech giant will start mass-producing advanced DRAM memory chips at its Japanese Hiroshima plant in Q4 this year.

ITHome reports that on a press media visit to Micron’s A3 chip manufacturing factory, Micron‘s Taiwanese division director, Lu Donghui announced that the A3 factory will be introducing extreme ultraviolet (EUV) lithography equipment in the second half of the year, to prepare early for the mass production of 1-gamma DRAM that is due to launch in 2024.

And as for 1-Beta DRAM Mass Production, it is reported that 1-Beta DRAM will be initially manufactured in Japan, and then the production will switch over to the Taiwanese plant later. For context, the current 1-Alpha DRAM is manufactured in the Taiwanese plant.

And the report by ITHome seems to be valid, as another news outlet, Nikkei Asia has reached out to Chief Business Officer at Micron, Sumit Sadana, regarding the news of 1-Beta DRAM production.

Nikkei Asia quotes Sadana that the company will start mass-producing advanced DRAM memory chips at its Hiroshima plant by the end of the year, which falls in Q4 2022. 

The company is coordinating with the Japanese government and business partners, such as equipment makers, to start producing them in Japan as well, Sadana said in an interview. He did not reveal the size of the investment in the Hiroshima plant but said manufacturing such chips generally requires new equipment and clean rooms.

Micron is expected to determine the scale of its investment based on government subsidies and other factors.

DRAM is used for temporary data storage in a wide variety of electronics, including smartphones and servers. And for Micron’s naming scheme, the company had already mass-produced its 1X, 1Y, 1Z and 1-alpha DRAM. The 1Xnm process is equivalent to 16-19nm, 1Ynm is equivalent to 14-16nm, and the 1Znm process is equivalent to 12-14nm. According to industry sources, the latest 1-alpha, 1-beta and 1-gamma may be equivalent to 14-12nm, 12-10nm and 10nm respectively

Micron has announced in 2021 plans to invest $150 billion in memory manufacturing and research and development worldwide over the next decade. With the company laying out plans for 1-beta production, industry watchers are looking to see where it will manufacture the next-generation 1-gamma DRAM, which is targeted for mass production in 2024.

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(Via 1, Via 2)

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Have you ever encountered a situation where your personal desktop or laptop did not have enough RAM to run a task? Or was your RAM not sufficient enough to prevent the programme from stuttering? And was that task keeping 15 tabs open on Google Chrome? 

If you answered yes to any of the 3 questions above, then Samsung might have the solution for you. Introducing Samsung’s latest DDR5 RAM solution, where technology now enables a user to possess 512GB of DDR5 memory on a single RAM stick.

As one of the current industry-leading suppliers of DDR4 memory, Samsung is planning to take the lead in the development of DDR5 RAM. Recently Samsung posted a video on its YouTube channel, highlighting the latest features of Samsung DDR5-7200 module technology.

Samsung‘s new 512GB DDR5 RAM modules refine the firm’s layer stacking memory packing tech, as used in its latest DDR4 memory modules. In the diagram below, you can compare the difference between Samsung’s 4-layer DDR4 memory chips, with the 8-layer DDR5 chips, both connected using Samsung’s Through Silicon Via technology. 

Through grinding of the silicon layers Samsung has been able to make the constituent dies 40 per cent thinner, and similarly reduced layer spacing – thus these much denser DDR5 integrated chipsets are actually thinner, at 1.0mm vs 1.2mm. In turn, Samsung will be able to manufacture a single 512GB RAM stick with 8 stacked DRAMs connected together.

Last but not least, Samsung claims its DDR5 technology is twice as fast as the previous generation, claiming speeds of up to more than 6400Mbps.

However, the increase in performance does not affect power efficiency because Samsung’s DDR5 technology is actually 30% more power-efficient than its previous generation thanks to the lower required voltages to run the DDR5 RAM.

Samsung has mentioned that it will be supplying DDR5 RAM to data centres, smartphone manufacturers and laptop manufacturers alike. And whether 512GB DDR5 RAM sticks will reach the hands of consumers, is a question reserved to be answered in the 2020s.

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The current generation of DRAM, DDR4, also known as “double data rate fourth generation” has been around for quite long. The module started to make its way to computers way back in 2014. However, it is only now after four year’s that we’re seeing the very first glimpse of the next generation, i.e. DDR5. SK Hynix, a prominent DRAM manufacturer, has managed to call first dibs on the world’s first 16GB DDR5 memory chip. The chips are also the first DDR5 modules to be compliant with the JEDEC memory standard.

Speaking more about specifications, the new modules are prepared using Hynix’ 10nm fabrication. DDR5 is expected to give much faster transfer speeds, and evidently, the Hynix DDR5 chip can go up to 5200Mbps transfer speeds which is roughly 60 percent faster than DDR4’s 3200Mbps. Furthermore, it will do this consuming 30 percent less power than the previous version. SK Hynix has left out some details including the die size used for the new modules.

The company intends to shore up its DDR5 range with other capacity versions like the 8GB and 32GB. However, the important thing to note is that SK Hynix has only demoed the first chipset. Actual commercial production isn’t expected to start until 2020. It took quite a lot of time before DDR4 RAM modules actually started going mainstream after they were finalized and this is likely to be the case with DDR5 as well.

Apart from SK Hynix, Cadence and Micron have also been working on DDR5 RAM and expecting productions to begin by 2019.

(Via)

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