South Korean tech giant Samsung Electronics has initiated the mass production of UFS 3.1 storage chips for automotive applications, specifically targeting in-vehicle infotainment (IVI) systems. The new lineup of NAND flash storage chips promises superior data transfer speeds, alongside the industry’s lowest energy consumption, contributing to increased stability. The storage chips will be available in three versions: 128GB, 256GB, and 512GB.

Power Efficiency and Speed: Samsung’s UFS 3.1 Storage Chips

The 256GB model in particular boasts an improvement in power efficiency of 33% compared to its predecessor, achieving up to 2,000Mbps sequential read speeds and up to 700Mbps sequential write speeds. Samsung’s new storage chips are certified for the AEC-Q100 Grade2 standard, assuring stable performance within a wide temperature range, from -40°C to 105°C. This makes them suitable for advanced driver assistance systems (ADAS).

Hyunduk Cho, Vice President of the Memory Product Planning Team at Samsung Electronics, expressed the company’s commitment to meet the evolving needs in the automotive semiconductor market and adhere to high ESG standards.

Samsung has received the ASPICE Level 2 certification, signaling the high reliability of its products. The company plans to make the new UFS 3.1 storage chips available to car manufacturers and automotive parts makers by the end of 2023.

Since initiating its automotive memory business in 2015, Samsung has consistently led the industry, introducing various innovative memory solutions including AutoSSD, Auto LPDDR5X, and Auto GDDR6. The launch of the UFS 3.1 chips for automotive applications reflects Samsung’s commitment to address growing data storage and computational demands within the sector.

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Samsung has unveiled version 4.0 of the Universal Flash Storage (UFS) solution. The company is a big name when it comes to smartphones and semiconductor. It is also one of the world’s leading manufacturers of memory chips. Samsung’s UFS 3.1 is already a strong performer, but the company’s next-generation flash storage promises huge speed and efficiency gains.

The new UFS 4.0 has been approved by the Joint Electron Device Engineering Council (JEDEC) board of directors. Samsung says that it implements the latest JEDEC standard specification in its new flash storage.

Samsung UFS 4.0 features and Specifications

As per the company, the new UFS storage is expected to improve performance and power efficiency on the upcoming phones. UFS 4.0 will offer a speed of up to 23.2Gbps per lane, which is double that of the previous UFS 3.1. This bandwidth is perfect for 5G smartphones that require huge amounts of data processing, says Samsung.

The new storage solution is said to be adopted in future automotive applications, Augmented reality (AR), and Virtual reality (VR) as well.

Power efficiency has also been increased in the UFS 4.0. The new memory will deliver a sequential read speed of 6.0MB/s per mA (milliampere), which is a 46% improvement over the previous 3.1 version of UFS. This means that smartphones equipped with the UFS 4.0 will have better battery life and improved read and write speeds.

The latest UFS 4.0 will have a smaller size as compared to the previous UFS 3.1. It will measure 11mm x 13mm x 1mm offering more effective space utilization and design convenience. In terms of storage capacity, it will come in a variety of capacities ranging up to 1TB. Mass production of the new memory is likely to commence in the third quarter of 2022.

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Recenty, a number of smartphone brands have been launching their own version of memory expansion technology (1,2) to boost the RAM of their smartphone offerings. Now, ZTE is developing its own memory expansion technology that offers a whopping 8GB boost in virtual RAM that will boost the Axon 30 5G from 12GB to 20GB of RAM.

For those unaware, memory expansion uses some of a handset’s ROM (internal storage) which is not in use to virtually boost the RAM. Through this, we have seen memory boosts of different ranges like 3GB or even 7GB. But its seems ZTE aims on improving this technology even further. According to Lu Qianhao, Director of Consumer Experience Department at ZTE, the technology has yet to be well received by users due its implementation so far.

He added that one of the reasons for the lack of its widespread adoption is that the end user does not always see noticeable difference in performance and apart from a boost in RAM amount it does not always offer a lot of benefits. As per the official, one of its implementation is a simple use of free ROM. But this lacks any proper background scheduling aglorithms that would make it very useful. He further added that the boost in virtual RAM is also not substantial at the moment.

But he stated that ZTE has developed its own Memory Expansion Pro technology to improve upon these limitations. The new proprietary system will combine UFS 3.1 ROM that has fast read and write speeds along with a brand new Lingxi engine to raise the RAM capacity by 8GB of RAM. This means that the Axon 30 5G’s 12GB of RAM could reach 20GB through this new technology.

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Samsung Electronics is a known brand in the consumer electronics industry. The company is popular for its smartphones, various home appliances and a lot more. However, many are unaware that the company is also a world leader in the memory market. Now, the South Korean tech giant has just announced that it is starting the mass production of the world’s fastest storage units that will soon be available in flagship smartphones.

Samsung has begun the large scale manufacturing of the industry’s first 512GB eUFS (embedded Universal Flash Storage) 3.1. You can expect these to be house in premium grade flagships and are touted to deliver performance speeds nearly three times higher than the current generation, eUFS 3.0. The company broke the 1GB/s threshold through the new eUFS 3.1, marking a new advancement in technology.

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According to Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung, “smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards.” In other words, Samsung is focusing on the future, since it is preparing for the advancement in other fields which the faster memory will supplement eventually. This holds especially true in terms of gaming performance and large media files like 4K or even 8K video recording.

In terms of read and write speeds, the new Samsung eUFS 3.1 storage boasts 1,200MB/s which is over twice as fast as the SATA based SSD storage of PCs (with 540 MB/s). Similarly, these speeds are over 10 times faster than conventional microSD card read speeds as well (90MB/s). The new memory technology may even soon be found in ultra thin ultrabook laptops as well. So stay tuned as we’ll cover smartphones that will feature the new memory standards.

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Phones come with either eMMC storage or UFS (Universal Flash Storage) and it is no news that the latter is the faster type of storage. UFS used to be found mostly on flagship phones but in recent times, they have been put into mid-range devices too while eMMC storage has been relegated to entry-level devices.

The JEDEC Solid State Technology Association has now unveiled the latest version of UFS called UFS 3.1 (JESD220E). It succeeds UFS 3.0 which appeared in Samsung’s 2019 flagships and even OnePlus’s own phones too.

According to the press release by JEDEC, UFS 3.1 is designed for mobile applications and computing systems that require high-performance with low power consumption. The new storage technology brings three major improvements over the last generation. They are:

• Write Booster: an SLC non-volatile cache that amplifies write speed.
• DeepSleep: a new UFS device low power state targeting lower-cost systems that share UFS voltage regulators with other functions.
• Performance Throttling Notification: allows the UFS device to notify the host when storage performance is throttled due to high temperature.

JEDEC also announced a companion standard called UFS Host Performance Booster (HPB) Extension which provides the option to cache the UFS device logical-to-physical address map in the system’s DRAM.

There is no information regarding when we will begin to see the new storage standard in devices but we will not be surprised if it shows up first in a Samsung device.

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