According to a recent press release from South Korean semiconductor manufacturer SK Hynix, the company has developed a series of new storage products, which the company showcased at the FMS 2024 Summit. The development includes USF 4.1 universal flash memory.
SK Hynix showcased two UFS 4.1 universal flash memories with capacities of 512GB and 1TB respectively. Both of them are based on 321-layer stacked V9 1Tb TLC NAND flash memory. The company not only displayed the announced 1Tb capacity and 2.4Gbps rate TLC, but also exhibited the industry-leading 3.2Gbps V9 2Tb QLC and 3.6Gbps high-speed V9H 1Tb TLC particles for the first time.
Unfortunately, detailed specifications of the UFS 4.1 storage chips have not been officially released yet. It was rumored that the UFS 4.1 storage offers a data transfer rate of 8 gigabits per second (GB/s), which is an improvement over the 4 GB/s offered by the UFS 4.0 storage chips.
The latest UFS specification that has been published is UFS 4.0 in August 2022. UFS 4.0 specifies a theoretical interface speed of up to 46.4Gbps per device, and USF 4.1 is expected to further improve the transfer rate.
Back in May this year, the company also announced its development of the ZUFS 4.0 (Zoned UFS). According to the company, this is a NAND flash memory chip that improves the efficiency of data management and optimizes data transfer between the operating system and storage devices. The application of this flash memory product includes various electronic devices such as digital cameras and smartphones. According to the company. it also improves the performance of the on-device AI applications.
UFS 4.1 is expected to further improve the storage performance of smartphones and other electronic devices. According to a previous leak, we could be able to experience the improvements offered by UFS 4.1 with the Galaxy S25 Ultra.
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