Samsung is reportedly seeking to improve the production yield of 6th generation NAND flash memory chips. The South Korean tech giant has apparently set up a special task force for this goal. 
This new task force will seek to raise the competitiveness of its 128 layer V-NAND chip production. The group will include executives from Samsung Device Solutions’ Manufacturing Technology Center and officials from the department that run the NAND flash production. This new team will help solve any issues that may arise during the chip production process and will implement steps to improve overall productivity.
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Currently, Samsung utilizes the channel hole etching technology, which pierces holes from the top to the bottom of the stacked 128 layers. This offers an electrical connection between layers, with higher stacks enabling higher memory capacity. One of the primary drawbacks of this method is the production time since this process for the 128 layers requires twice as long when compared to 96 layer NAND flash chips.
Thus, the new task force will work to overcome such limitations to improve the company’s overall competitiveness. This move from Samsung is a part of its “Super Gap” strategy, which essentially means, leaving the competition so far behind that they can’t catch up. The company has already achieved competitive pricing through its 128-layer NAND flash chip production process but is seeking to improve its margins even further.
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