Samsung has recently announced that it has started mass production of its 16-gigabit (Gb) DDR5 DRAM, utilizing the industry’s pioneering 12-nanometer (nm)-class process technology. This achievement comes after the initial announcement made in December of the previous year.
Boosting AI Applications: The Potential of Samsung’s Newest DRAM
The production process incorporates advanced multi-layer extreme ultraviolet (EUV) lithography, establishing the highest die density in the industry. Consequently, this technology yields a 20% increase in wafer productivity.
Furthermore, this DDR5 DRAM exhibits a considerable reduction in power consumption of up to 23% when compared to previous generations. Samsung asserts that this makes their solution highly suitable for global IT companies aiming to enhance their eco-friendly operations.
The utilization of a new high-κ material contributes to increased cell capacitance. Enhanced capacitance results in a significant electric potential difference in data signals, facilitating more accurate differentiation between them.
The DDR5 DRAM claims to deliver speeds of 7.2 gigabits per second (Gbps). To put this into perspective, it can process two 30-gigabyte (GB) ultra-high-definition movies in just one second. This exceptional speed positions the technology to support an expanding array of applications, including data centers, artificial intelligence, and next-generation computing.
Samsung completed the evaluation of its 16-gigabit DDR5 DRAM for compatibility with AMD in December of last year and continues to collaborate with global IT companies to drive innovation in the next-generation DRAM market.
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