South Korean tech giant Samsung is doubling down on memory chips with a new research lab in Silicon Valley, USA. This lab, under the company’s US arm DSA, will focus on developing the next generation of 3D DRAM technology, aiming to maintain Samsung’s position as the world’s leading memory chip maker.

The company is actively working on developing innovative DRAM structures utilizing sub-10nm fabrication technologies. Yonhap News Agency reports that this breakthrough technology is expected to yield higher-capacity memory chips, reaching up to 100Gb per chip.

Samsung lab 3D DRAM

Samsung isn’t new to pioneering memory advances, having first released commercial 3D vertical NAND flash in 2013. Now, they could become the first to develop 3D DRAM as well.

This move comes as the memory chip market rebounds after a rough year.  Samsung’s semiconductor division faced its first-ever loss due to the chip market’s downturn last year.

The post-COVID-19 cloud server boom prompted numerous tech companies to order substantial quantities of memory chips. However, the global economic downturn led to a decline in demand, resulting in an oversupply of memory chips and a decline in prices.

However, thanks to the increasing demand for AI servers driven by tools like ChatGPT, memory chip prices are on the rise again. Experts predict 2024 to be a strong year for Samsung and its competitors like Micron and SK Hynix.

Samsung’s focus on advanced DRAM could also see them partnering with Intel. Their LPDDR5X DRAM chips are potential candidates for Intel’s upcoming Lunar Lake processors, due later this year. This partnership could further solidify Samsung’s position in the memory chip market.

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