Samsung Electronics is making a first-time appearance at the upcoming Beijing Auto Show (April 25-27), showcasing cutting-edge memory solutions designed for the future of automobiles. Visitors can explore three main exhibition areas: memory, system LSI (large-scale integration), and foundry. Here, Samsung will highlight their latest advancements in memory for Advanced Driver-Assistance Systems (ADAS) and In-Vehicle Infotainment (IVI) systems.
Samsung’s new lineup boasts 25% performance improvement over its predecessor
Samsung’s lineup boasts the next-generation 10.7Gbps LPDDR5X DRAM, offering a 25% performance improvement and a 30% capacity increase over its predecessor. This translates to single-package capacities reaching 32GB, perfectly suited for the demanding memory requirements of AI-powered applications in vehicles. Mass production is expected in the second half of 2024 after final testing.
For enhanced in-car experiences, Samsung will also showcase UFS 3.1 flash storage. Available in capacities ranging from 128GB to 1TB, UFS 3.1 offers 3x faster write speeds compared to the previous generation. This translates to better battery life management in electric and self-driving cars, while its 1200MB/s speed minimizes buffering during downloads. Beyond automotive applications, UFS 3.1 is also well-suited for 5G mobile devices requiring fast, large-scale storage, such as AR/VR headsets and high-resolution recording devices.
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