According to recent reports, Samsung is set to release the Galaxy S23 FE in the last quarter of 2023, following a break from launching a Fan Edition phone last year. Despite early leaks and certifications indicating a highly anticipated device, there has been speculation surrounding the controversial Exynos 2200 SoC potentially powering the smartphone. Unfortunately for eager fans awaiting the Galaxy S23 FE, these fears have been confirmed with a recent Geekbench listing.
The Samsung Galaxy S23 FE with model number SM-711B has appeared on the Geekbench 6 compute test revealing many key details. It has 8GB RAM onboard along with Android 13 and an octa-core processor with a base clock of 1.82 GHz and a boost clock of 2.80 GHz. The s5e9925 motherboard and the Samsung Xclipse 920 GPU undoubtedly confirm that this is indeed the Exynos 2200 chipset.
Although the Exynos 2200 was initially unveiled alongside the Galaxy S22 series, it fell short of the high expectations as a rival to the Snapdragon 8 Gen 1 chipset. Its performance improvements are modest, with only a marginal 5% boost in CPU performance compared to its predecessor, the Exynos 2100 found in the Galaxy S21 FE. On the other hand, the Exynos 2200 does offer around 15% better GPU performance. Therefore, if you’re considering upgrading from the Galaxy S21 FE, the performance gains you can expect with the Exynos 2200 might not be significant.
Samsung Galaxy S23 FE specs (rumored)
Rumored specifications for the Galaxy S23 FE suggest it will feature a 6.4-inch FHD+ AMOLED display with a smooth 120Hz refresh rate. It is expected to offer users a choice between different storage configurations, including options for 6GB or 8GB of RAM and 128GB or 256GB of storage. Reports also indicate that the device will be equipped with a 4,500mAh battery and support 25W fast charging. Notably, there are speculations of a significant camera improvement on the Galaxy S23 FE, potentially featuring a 50MP camera compared to the 12MP camera on its predecessor, the Galaxy S21 FE.
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