If you are a Samsung fan, you may want to skip this year’s flagships. It appears next year’s flagships will be packing some serious power and speed, starting with the Galaxy S10.
According to @UniverseIce, Samsung will begin mass production of LPDDR5 RAM and UFS 3.0 NAND in the second half of this year. These two components may first appear in the Galaxy S10.
Samsung will mass-produce LPDDR5 and UFS3.0 chips in the second half of the year, and I look forward to the Galaxy S10.
— Ice universe (@UniverseIce) June 14, 2018
UFS 3.0 is said to have twice the bandwidth of UFS 2.1 with speeds of up to 23.2Gbps (single lane = 11.6Gbps). It also consumes less power and has an extended temperature range for use in the automotive industries. For LPDDR5, we should expect a 10% increase in performance and a 15% increase in energy efficiency.
There are other features that have been rumored to come with the Galaxy S10, key among them are an in-display fingerprint scanner and 3D face scanning technology. Its next chipset, the Exynos 9820 is also expected to offer impressive processing power that will significantly outperform Qualcomm’s Snapdragon 855 chipset.