Back in 2019, SK Hynix announced that it was successful in the development of a new generation of DRAM memory chips. These new chips were labeled as HBM2E, which are now finally ready for mass production.
According to official claims, the HBM2E has a performance of 3686.4Gbps per pin. This translates to a bandwidth of more than 460GB/s, with a total of 1024 I/O (input/output). The HBM2E architecture stacks eight 16 gigabit DRAM chips with TSV (Through Silicon Via) technology to achieve a total capacity of 16GB, which is more than twice the capacity of previous generation HBM2 memory.
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For those unaware, HBM2 was the memory used by AMD in its previous generation of Radeon Fury graphics cards that were first released back in 2015. Despite having various advantages, its high cost and other limiting factors led to its eventual discontinuation in later generations. Although now, SK Hynix has launched the latest generation of memory solution that arrives with AI systems with deep learning accelerators that would be useful for high performance computers.
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