Samsung said last month that it had begun producing chips based on a 3-nanometer (nm) manufacturing node using the Gate-All-Around (GAA) transistor architecture.
The company revealed today at a Korean event that it has begun shipping the first 3nm chip made using Gate All Around technology at the V1 line (EUV only) at Hwaseong Campus.
With the belief that “we will move forward with innovative technology to become the best in the world,” Samsung Electronics’ Foundry Division seeks to increase the competitiveness of its business through mass production of the 3-nano GAA process and pre-emptive foundry technology.
According to Samsung, around 100 people attended the occasion, including Samsung Electronics CEO Kye Kyung-hyeon, Minister of Trade, Industry, and Energy Changyang Lee, suppliers, fabless, and executives and workers who engaged in 3nm GAA R&D and mass production.
According to Samsung, the Pyeongtaek Campus would eventually see the addition of 3-nano GAA chip fabrication. While Samsung’s top rival in the semiconductor business, TSMC, is expected to begin its 3nm chip production around Q4 2022.
Going by a report from last year, AMD and Qualcomm might be among the first customers of Samsung’s new cutting-edge process. The report also mentioned that Nvidia might also be among the first brands to adopt the 3nm node from Samsung, however, the company’s recent overbooking issues have left a big question mark on this possibility.
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(Source)
