While Toshiba has begun testing UFS 3.0 chips, it appears Samsung still plans to use UFS 2.1 for a little more while before making the switch. The Korean-electronics giant announced its largest capacity UFS storage today which has a 1TB capacity.
The announcement comes a few weeks before the launch of the Galaxy S10 series which has been reported to have a variant with 12GB of RAM and 1TB of storage.
The 1TB eUFS 2.1 chip is a single-chip design and boasts an improvement in read and write speeds compared to the 512GB eUFS 2.1. The chip size is the same, measuring 11.5 x 13 mm and has 16 5th-gen 512Gb V-NAND flash memory layers.
The 1TB storage has a sequential read speed of 1000MB/s, a sequential write speed of 260 MB/s, a random read speed of 58,000 IOPS and a random write speed of 50,000 IOPS. These are significant gains in speeds when compared to Samsung’s other versions.
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Samsung says mass production has begun and it also plans to “expand production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant” throughout H1 2019 in anticipation of strong demand of 1TB eUFS storage by phone manufacturers this year. This means we will be seeing a lot of 1TB phones launching this year.
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